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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUF405A DESCRIPTION With TO-220C package High voltage,high speed APPLICATIONS Switch mode power supplies Motor drivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Open base Collector-emitter voltage HAN INC Collector current (DC) Collector current-Peak Base current (DC) Base current-Peak Total power dissipation Emitter-base voltage SEM GE tp<5ms tp<5ms TC=25ae Open collector OND IC TOR UC VALUE 1000 450 7 7.5 15 3 4.5 80 150 -65~150 UNIT V V V A A A A W ae ae Maximum operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction to case VALUE 1.56 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. BUF405A SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=200mA ; IB=0; L=25mH 450 V V(BR)EBO VCEsat-1 Emitter-base breakdwon voltage IE=50mA ;IC=0 IC=2.5A; IB=0.25A TC=100ae IC=5A ;IB=1A TC=100ae IC=2.5A; IB=0.25A TC=100ae IC=5A ;IB=1A TC=100ae VCE=1000V; VBE=-1.5V TC=100ae VEB=5V; IC=0 7 0.8 2.8 0.5 2.0 0.9 1.5 1.1 1.5 100 500 |I V Collector-emitter saturation voltage V VCEsat-2 Collector-emitter saturation voltage V VBEsat-1 Base-emitter saturation voltage V VBEsat-2 Base-emitter saturation voltage V ICEV Collector cut-off current IEBO Switching times inductive load Emitter cut-off current ANG CH A ts Storage time tf Fall time IN EMIC ES IC=2.5A ;VCC=50V IB1 =0.25A;VBB=-5V ;L=1mH RBB=2.4| ;Vclamp=400V DUC ON 0.8 TOR 1 mA |I s 0.05 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUF405A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 |
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